1.30.1 0.65 2 . 3 0 . 1 5 0.30.1 2.10.1 0 . 5 2 5 1 . 2 5 0 . 1 0 . 3 6 0.1 +0.05 -0.02 0 . 1 m a x 0 . 9 5 0 . 0 5 sot-323 unit:mm 1 2 3 1 emitter 2 base 3 collector 1.30.1 0.65 2 . 3 0 . 1 5 0.30.1 2.10.1 0 . 5 2 5 1 . 2 5 0 . 1 0 . 3 6 0.1 +0.05 -0.02 0 . 1 m a x 0 . 9 5 0 . 0 5 sot-323 unit:mm 1 2 3 1 emitter 2 base 3 collector mm sta 42 features high breakdow n voltage low c ollect or-e m itt er saturation voltage com plem entary to mm sta 92 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base volt age v cbo 300 v collector-em itt er voltage v ceo 300 v em itt er-base voltage v ebo 5 v collector curr ent -continuo us i c 300 m a collector pow er dissipati on p c 200 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to 150 el ectrical character istics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo ic = 100 a i e =0 300 v collector-to-e m itt er bre akdow n voltage v (br)ceo ic = 1 m a i b =0 300 v em itt er- to-base brea kdow n voltage v (br)ebo i e = 100 a i c =0 5 v collector cutof f c urr ent ic bo v cb = 200 v , i e =0 0.25 a em itt er cutoff c urr ent i ebo v eb = 5v , i c =0 0.1 a v ce = 10v, i c = 1m a 60 v ce = 10v, i c = 10m a 100 200 v ce = 10v, i c = 30m a 75 collector-emit ter sat uration v oltage v ce(sat) i c =20 m a, i b = 2m a 0.5 v base-em itt er saturation voltage v be(sat) i c = 20 m a, i b = 2m a 0.9 v output capacitance cob v cb = 20v, f = 1.0m hz , i e = 0 3.0 pf transition frequency f t v ce = 20v, i c = 10m a,f =30m hz 50 mh z h fe dc curre nt gain mark ing mar king k3m sales@twtysemi.com 1of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors product specification 4008-318-123
|
